摘要:器件专门用于标准栅极驱动电路,栅极电荷低至22.5 nC.Qoss为34.2nC,采用PowerPAK■1212-8S封装宾夕法尼亚、MALVERN-2019年8月12日-日前,Vishay Intertechnology,Inc.(NYSE股市代号:VSH)宜布,推出新款60 V TrenchFET■第四代n沟道功率MOSFET--SiSS22DN,业内首款适用于标准栅极驱动电路的器件,10 V条件下最大导通电阻降至4 mΩ,采用热增强型3.3mm×3.3 mm PowerPAK■1212-8S封装。
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