摘要:Vishay推出新的25V N沟道TrenchFET Gen IV功率MOSFET——SiRA20DP,这颗器件在10V的最大导通电阻为业内最低,仅有0.58mΩ。Vishay SiliconixSiRA20DP具有最低的栅极电荷,导通电阻还不到0.6mΩ,使栅极电荷与导通电阻乘积优值系数(FOM)也达到最低,可使各种应用提高效率和功率密度。此次的MOSFET采用6mm×5mm PowerPAK SO-8封装,是目前最大导通电阻小于0.6mΩ的两颗25V MOSFET之一。与同类器件相比,
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