摘要:为改善GdI3:Ce闪烁体在探测中子过程中的γ抑制能力,使用Geant4和XCOM计算了其γ线性吸收系数,并通过模拟计算与实验测量研究了铅屏蔽法抑制γ的有效性。结果表明:GdI3:Ce闪烁体在探测中子过程中易受低能γ射线的干扰;随着铅层厚度的增加,100keV-1 MeV的γ射线对中子探测的干扰减小,而3-10 MeV的γ射线的干扰呈先增加后减小的趋势。对^252Cf中子源的实验测试发现,在碘化钆闪烁体添加铅层后,中子峰得以显现;随着铅层厚度的增加,中子峰内净计数减小,而净计数与本底计数的比值上升。模拟和实验结果均表明,在使用GdI3:Ce闪烁体探测中子时,应根据中子探测效率和信噪比的优化确定γ屏蔽铅层的厚度。
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