摘要:采用锡单质直接氧化法在850℃制备了SnO2纳米线,采用X射线衍射仪和X射线能谱仪对SnO2纳米线进行了物相分析,用扫描电子显微镜和透射电子显微镜对其形貌进行了观察,并在荧光光谱仪上研究了其光致发光特性。结果表明:制备的SnO2纳米线具有正方金红石结构,其尺寸均匀一致,长度为数十到数百微米,有的甚至达到数毫米,直径约为100nm;其生长机理由气一固(VS)生长机制控制;室温下,其光致发光谱在395nm(3.14eV)处有一强峰,在310nm(4eV)处有一弱峰,发光主要是由单离子氧空位引起。
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