摘要:用射频磁控溅射法在硅基片上制备了AlN、BN单层膜及AlN/BN纳米多层膜,采用X射线衍射仪、傅立叶变换红外光谱仪、小角度X射线反射仪、高分辨率透射电子显微镜和原子力显微镜等对其进行了表征。结果表明:AlN/BN多层膜具有(103)择优取向,并且当AlN层厚固定时,随着BN层厚的增加,(103)择优取向得到强化;AlN单层膜及AlN/BN纳米多层膜均呈岛状生长,多层膜界面粗糙度及表面粗糙度均随着BN层厚的增加而减小;多层膜中BN的结构与BN的层厚有关,当AlN层厚保持在4.0 nm且BN层厚为0.32~0.55 nm时,可获得晶态w-BN,当BN层厚增至0.74 nm时,BN呈非晶态。
注:因版权方要求,不能公开全文,如需全文,请咨询杂志社
热门期刊服务
Neural Regeneration Research Rare Metals Journal of Rare Earths Cell Research Journal of Integrative Agriculture Hepatobiliary Pancreatic Diseases International Hepatobiliary Pancreatic Diseases International International Journal of Minerals Metallurgy and Materials Journal of Earth Science Acta Geologica Sinica Acta Geologica Sinica Acta Metallurgica Sinica