摘要：采用溶胶-凝胶法在Si（100）衬底上制备了不同浓度Al掺杂的ZnO（AZO）薄膜。XRD研究表明Al掺杂对薄膜的结晶产生明显的影响。用四探针法测量其电阻特性，表明在1mol％Al掺杂，600℃下退火，其电阻率最低。
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