首页 期刊 材料研究与应用 High dielectric constant materials and their application to IC gate stack systems 【正文】

High dielectric constant materials and their application to IC gate stack systems

作者:屠海令 National; Engineering; Research; Center; for; Semiconductor; Materials; General; Research; Institute; for; Nonferrous; Metals; Beijing; 100088; China
二氧化硅   电介质   绝缘体   绝缘材料  

摘要:High dielectric constant (high-k) materials are vital tothe nanoelectronic devices.The paper reviews research development of high-k materials, describes a variety of manufacture technologies and discusses the application of the gate stack systems to non-classical device structures.

注:因版权方要求,不能公开全文,如需全文,请咨询杂志社

学术咨询 免费咨询 杂志订阅