摘要:研究了Pt/Nb∶SrTiO3/In结构器件的异常双极性电阻变换特性,并对其物理机理进行了讨论。用直流磁控溅射的方法在不同组分Nb掺杂SrTiO3(NSTO)(001)单晶衬底上制备了Pt和In电极,构建了Pt/NSTO/In异质结。该异质结的I-V特性测试结果表明,该异质结具有不同寻常的双极性阻变特性。随着Nb在SrTiO3中掺杂浓度的改变,决定样品在正电压扫描过程中由高电阻状态(HRS)向低电阻状态(LRS)或由LRS向HRS转换的阈值电压也呈现出规律性变化。对其阻变特性的物理机制分析表明,Pt/NSTO界面肖特基势垒和Pt/NSTO、NSTO/In界面处的氧空位引入的缺陷能级对电子的束缚和释放与该器件不同寻常的双极性电阻变换特性密切相关。
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